Qorvo has introduced its highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor that has an output power of 1.8 KW. The QPD1025 is a 65 volts GaN Transistor operates from 1.0 to 1.1 GHz and delivers outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.
The QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz and supports both CW and pulsed operations. It has significantly better drain efficiency and beats LDMOS by nearly 15% in terms of efficiency, which is significant in IFF and avionics applications.
The device is available in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. It is internally matched so it does not require an external matching network which saves considerable board space.
Qorvo offers the largest, most innovative GaN-on-SiC portfolio. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000.
Engineering samples of the QPD1025 are available now. Click here to learn more about this product.
