NXP Expands its 65 V RF LDMOS Transistor Offering

At the European Microwave Week in Madrid, NXP Semiconductors has introduced the new MRFX series of power transistors designed for smart industrial applications, featuring the groundbreaking 65 V LDMOS silicon technology. With more power density, a lower current level and wider safety margins than previous RF power solutions, 65 V LDMOS enables more integrated, highly reliable Industry 4.0 systems that can leverage the superior level of control that solid state enables, combined with a high degree of energy management.

The MRFX series of 65 V LDMOS devices targets industrial, scientific and medical (ISM) applications such as laser generation, plasma processing, magnetic-resonance imaging, skin treatment, and diathermy, as well as the growing segment of RF Energy where transistors replace vacuum tubes in industrial heating machines. They are also designed for radio and TV broadcast transmitters.

65 V LDMOS made its debut in 2017 with the MRFX1K80H device, capable of 1800 W CW (continuous wave) in an air-cavity ceramic package. Many new reference circuits for the MRFX1K80H have since been designed, enabling RF designers to jump-start their development at 27, 64, 81.36, 87.5-108, 128, 175, 174-230 and 230 MHz.

Focusing on ease of use to enable faster development times and design reuse from previous 50 V solutions, NXP recently added to its 65 V offering:

  • MRFX1K80H: 1800 W over-molded plastic package version of the MRFX1K80H device, enabling a 30% lower thermal resistance (0.06 °C / W).
  • MRFX600H: 600 W solution in a small footprint, featuring an unmatched 12.5-ohm output impedance to fit a 4:1 output transformer.
  • MRFX035H: 35 W driver of previous final-stage devices. It comes with an unmatched 50-ohm output impedance, for the most compact board layouts.

Power supply manufacturers are enabling 65 V solutions into their products. ABB Embedded Power is developing a 3.5 kilowatt (kW), 65 V power supply unit to drive NXP transistors of the MRFX Series.

All 27, 64, 81.36, 87.5-108, 128, 175, 174-230 and 230 MHz reference circuits for the MRFX1K80H are now available from NXP. All devices of the MRFX series are part of NXP’s 15-year Product Longevity Program. Click here to learn more about these 65 V LDMOS devices.

Publisher: everything RF
Tags:-   TransistorLDMOS