According to a report published by ABI Research, the spending on RF and Microwave power semiconductors has been kick-started by the availability of new gallium nitride (GaN) devices for 4 to 18 GHz. Point-to-point communications, SATCOM, radars of all types and new industrial/medical applications will all benefit by the introduction of these high-power GaN devices.
Gallium Nitride is expected to replace Gallium Arsenide in a number of high power applications as it is able to operate at much higher voltages and power levels. GaN is finally reaching the performance points that can start to seriously challenge travelling wave tube applications for new designs that have historically used the latter.
With the current release, analysis of the six main vertical segments (C-Band GaAs, C-Band GaN, X-Band GaAs, X-Band GaN, Ku-Band GaAs, and Ku-Band GaN) is further expanded to 28 application sub-segments.
These findings are part of ABI Research’s High-Power RF Active Devices Research Service which also includes other Research Reports, Market Data, and analyst inquiry support. For more information visit www.abiresearch.com
