Raytheon has embarked on its fifteenth year of development and system integration of Gallium Nitride (GaN) technology. Raytheon first started research on GaN at its foundry in Andover, MA in 1999. Today, they are one of the key players who have demonstrating the maturity of the technology which significantly extends the warfighter's reach into the battle space by increasing radar ranges, sensitivity and search capabilities. Raytheon has also partnered with the Defense Advanced Research Projects Agency (DARPA), an agency of the U.S. Department of Defense responsible for the development of new technologies for use by the military, and the Office of the Secretary of Defense (OSD) to drive forward the development and integration of this revolutionary technology.
This infograph goes over the notable GaN Milestones for Raytheon over the years.
