Wolfspeed, a Cree company, will be showcasing its latest advancements in Aerospace/Defense RF and Communications infrastructure applications at the upcoming EuMW 2019 event. The company showcase will also include their broad assortment of GaN-on-SiC and LDMOS parts. Wolfspeed experts will be on hand to help visitors on their system design challenges along with providing an insight into our foundry services and the upcoming free online training. Wolfspeed will be present at the event at its Booth #B175.
Highlights of Wolfspeed at EuMW 2019:
- Radar products span L-Band to Ku-Band
- Extensive portfolio of a wide variety of LDMOS and GaN on SiC solutions for Telecom, Aerospace and Defense communications
- LDMOS and GaN on SiC solutions for 4G and 5G, including the (3.6-3.8) GHz High Efficiency Doherty GaN Transistor
- General Purpose Broadband and Satcom solutions, including two new products for our unmatched discrete GaN HEMT product line at 35W and 120W
Wolfspeed will also be offering three presentations during the open exhibition days.
TUESDAY, OCTOBER 1st
Foundry Panel Session: mmWave MMIC Foundry Processes
Location: EuMW Closing Session, Pavillon 7, Room N01
Wolfspeed's Foundry Services turn designs into a faster, more reliable reality. As leaders in GaN on SiC MMIC technology, Wolfspeed has the design assistance, testing and support to realize specifications from initial development to recurring production. With the release of its 0.15μm process, the company can now support all applications from DC through Ka Band. This process is the only GaN process in mm-Wave that supports high reliability at 28V. Applications include Satellite Communications, EW, Radio Links, 5G, C-IED and ISM.
Ku Band and X Band Demonstrations (CMPA1D1E080F & CMPA901A035F)
Location: Mercure Vaugirard Porte de Versailles Hotel
CMPA1D1E080F is a Mid Ku-Band GaN MMIC PA for satcom applications and radio links. With 500 MHz video bandwidth, it provides an industry leading and reliable solution for tube replacements for satellite communication. The three-stage design provides ample gain while maintaining linearity across the band. Applications include: Satellite Communications and Radio Links.
CMPA901A035F is a Broadband GaN MMIC Power Amplifier for 28 V X-Band radar applications. With a three stage design, it provides a high gain and output power solution at X-Band using Wolfspeed’s industry leading GaN technology. The high PAE at these frequencies combined with a ceramic package allows the flexibility for this device to operate CW for applications outside radar. Applications include: X-Band Military Radar, Marine Radar, and Weather Radar
WEDNESDAY, OCTOBER 2nd
Designing GaN Power Amplifiers with Wolfspeed Large Signal Models
Location: Mercure Vaugirard Porte de Versailles Hotel
This presentation will cover the core aspects of the Wolfspeed nonlinear GaN HEMT model in relation to designing power amplifiers. The Wolfspeed GaN model has successfully assisted designers to achieve numerous successful power amplifier designs using the GaN HEMT foundry services. Designers often achieved design specs with first pass iteration and greatly reduced design cost and design cycles using the model. A design example using the model will be given in the presentation including product number CG2H30070 and using process G28v4. Applications include the EW market for dismounted or man-portable uses.
Products on Display at the Wolfspeed Booth:
GTRA384802FC: High efficiency and high peak power ideal for 40W base station systems from 3.6 to 3.8 GHz
GTRA374902FC: High efficiency and high peak power ideal for 40W base station systems from 3.6 to 3.7 GHz
CGHV35120F: Next level performance in the 100-W power class for S-Band radar RF devices from 3.1 to 3.5 GHz
CMPA2060035F: A new GaN HEMT MMIC amplifier delivering 35 watts of power from 2 to 6 GHz of bandwidth
GTVA101K42EV: A 1400-watt (50 V) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications from 960 to 1215 MHz.
CMPA901A035: 35 W Broadband GaN MMIC power amplifier for 28 V X-band radar applications from 8 to 10.5 GHz.
Wolfspeed is the only power semiconductor manufacturer that is vertically integrated, so it controls supply and design from wafer to module. It is the only semiconductor manufacturer that controls 100% of its SiC material supply. The company doubled its production capacity in September 2018 and is now on track to double production capacity again before the end of calendar year 2020.
The EuMW 2019 will be held in Paris, France from October 1-3. Click here to see everything RF’s coverage of the event.
