Fairview Releases Class AB Broadband High Power Amplifiers from 20 MHz to 18 GHz

Fairview Releases Class AB Broadband High Power Amplifiers from 20 MHz to 18 GHz

Leading developer of RF/Microwave components, Fairview Microwave, has launched a new series of Class AB broadband high power amplifier modules that incorporate GaN, LDMOS or VDMOS semiconductor technology.

The comprehensive new line up consists of 18 new models spanning frequency bands from 20 MHz to 18 GHz. These designs are unconditionally stable and operate in a 50 Ohm environment. They offer power gain up to 53 dB and saturated output power levels from 10 Watts to 200 Watts. This line includes 2 new heat-sink modules with DC controlled cooling fans specifically designed for the 18 new models to ensure optimum base-plate temperature for highly reliable performance.

This new series will provide customers with more options for applications that need a high power, small-form-factor RF amplifier that uses cutting-edge semiconductor technology with wide dynamic range over a broad array of frequencies, high linearity and exceptional efficiency.

The compact coaxial packages utilize N-Type or SMA connectors and have integrated D-Sub control connectors for DC bias, enabled with TTL logic control and temperature and current sense functions. The rugged assemblies can withstand relative humidity exposure up to 95% maximum and operate over a wide temperature range from -20°C to +60°C.

The new Class AB high power amplifiers and heat-sinks are currently in-stock and available for immediate shipping with no minimum order quantity required.

Publisher: everything RF
Tags:-   Power AmplifierAmplifierGaNLDMOS