AHL5417T8

RF Amplifier by ASB Inc. (381 more products)

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The AHL5417T8 from ASB is a Low Noise Amplifier that operates from 50 MHz to 4 GHz. It provides a gain of 17.5 dB (at 2 GHz) with a noise figure of less than 2.15 dB and has a P1dB of 19 dBm. This GaAs E-pHEMT amplifier requires a DC supply from 3 to 5 V and consumes less than 78 mA of current. It has an active bias circuit that enables stable current consumption over temperature and process variations. This LNA is available in a surface-mount TDFN8 package that measures 2 x 2 mm and is suitable for use in both telecommunication receiver and transmitter applications and other low noise applications.

Product Specifications

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Product Details

  • Part Number
    AHL5417T8
  • Manufacturer
    ASB Inc.
  • Description
    E-pHEMT Ultra-Low Noise Amplifier MMIC from 50 MHz to 4 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Display Application
    Wide-band application, V-ONU, Other Low Noise Application
  • Frequency
    50 to 4000 MHz
  • Gain
    16.5 to 17.6 dB
  • Noise Figure
    1.35 to 2.15 dB
  • P1dB
    0.079 W
  • P1dB
    19 dBm
  • IP3
    32 to 36 dBm
  • IP3
    1.5 to 4 W
  • Input Power
    27 dBm
  • Input Power
    0.5 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input Return Loss
    -16 to -9 dB
  • Output Return Loss
    -10 to -18 dB
  • Supply Voltage
    5 V
  • Current Consumption
    78 mA
  • Package Type
    Surface Mount
  • Package
    TDFN8
  • Dimensions
    2 x 2 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 150 Degree C
  • RoHS
    Yes

Technical Documents