CMX90A705

Note : Your request will be directed to CML Microcircuits.

CMX90A705 Image

The CMX90A705 from CML Microcircuits is a Two-Stage GaN Power Amplifier that operates from 27.5 to 31 GHz. It delivers a saturated output power of 5.5 W (~37.4 dBm) with a small signal gain of 16.5 dB and PAE of 22%. This Ka-Band amplifier is fabricated using a state-of-the-art 0.15 µm gate length GaN-on-SiC process. It requires a DC supply of 22 to 28 V and consumes 860 mA of current.

 The CMX90A705 incorporates on-chip 50 Ohms nominal matching with integrated DC blocking capacitors at the I/O ports. This power amplifier is available in an AQFN-12 package that measures 4 x 4 mm. It can be used as both driver stage and final stage power amplifier in commercial satellite communication terminals, residential satellite internet, telecommunication, and commercial VSAT applications.

Product Specifications

View similar products

Product Details

  • Part Number
    CMX90A705
  • Manufacturer
    CML Microcircuits
  • Description
    5.5 W Two-stage GaN Power Amplifier from 27.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    VSAT
  • Industry Application
    SATCOM
  • Frequency
    27.5 to 31 GHz
  • Gain
    14 to 17 dB
  • Small Signal Gain
    14 to 17 dB
  • IP3
    42 dBm
  • Saturated Power
    5.5 W
  • PAE
    22 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    43 dB
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    10 dB
  • Output Return Loss
    9 dB
  • Supply Voltage
    22 to 28 V
  • Current Consumption
    182 mA
  • Transistor Technology
    GaN-on-SiC
  • Package Type
    Surface Mount
  • Package
    AQFN-12
  • Dimensions
    4 x 4 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • Tags
    SµRF Range

Technical Documents