The BGA9H1BN6 from Infineon Technologies is a Low Noise Amplifier designed for 4G and 5G applications from 2.3 to 2.7 GHz. It provides 20.3 dB of gain with a noise figure of 0.6 dB and has high EMI robustness. The LNA features multi-step control that allows the gain to be adjusted to increase the dynamic range of the system and provide a power saving option. It requires a DC supply from 1.1 to 3.3 V and consumes less than 2.8 mA of current. The amplifier further supports ultra-low bypass current of 0.6 µA to reduce power consumption.
The BGA9H1BN6 has a two-line-state control that is backwards compatible to a standard GPIO controlled LNA. The GPIO interface provides straight forward control over multiple operation modes (high gain mode, bypass mode, power-save mode and high-performance mode). It is available in a compact 6-pin TSNP-6 10 leadless package that measures 1.10 x 0.70 x 0.37 mm and is ideal for use in battery-powered LTE devices, wearables or 5G smartphones.
