APH669

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APH669 Image

The APH669 from Northrop Grumman is a Three-stage Power Amplifier that operates from 81 to 86 GHz. It delivers a saturated power output of 23.5 dBm with a gain of 16 dB and has a PAE of 13%. The amplifier utilizes fully passivated GaAs pHEMT devices to ensure rugged and reliable operation. It requires a DC supply voltage of 4 V and draws 305 mA of current. The APH669 is available as a die that measures 4.17 sq. mm and is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques. It is suitable for use in FCC E-band communication Systems in 81-86 GHz frequency band, short-haul / high-capacity links, enterprise wireless LAN, and wireless fiber replacement applications.

Product Specifications

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Product Details

  • Part Number
    APH669
  • Manufacturer
    Northrop Grumman
  • Description
    Three-stage Power Amplifier from 81 to 86 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Standards Supported
    E Band, WLAN
  • Industry Application
    Wireless Infrastructure
  • Frequency
    81 to 86 GHz
  • Gain
    15 to 16 dB
  • Output Power
    20 to 23.5 dBm
  • Output Power
    0.1 to 0.22 W
  • P1dB
    20 dBm
  • P1dB
    0.1 W
  • Saturated Power
    22.5 to 23.5 dBm
  • Saturated Power
    0.17 to 0.22 W
  • Input Return Loss
    6 to 10 dB
  • Output Return Loss
    8 to 11 dB
  • Supply Voltage
    0.02 to 4 V
  • Current Consumption
    135 to 180 mA
  • Transistor Technology
    HEMT
  • Technology
    GaAs

Technical Documents