The AFSC5G40E38 from NXP is a fully integrated Doherty LDMOS Power Amplifier module designed for wireless infrastructure applications from 3.7 to 4 GHz. This amplifier provides 6.3 W of average output power with a gain of more than 27.5 dB and an efficiency of 39.3% at 3900 MHz. It requires a 28 VDC supply and is internally matched to 50 ohms.

This Airfast power amplifier has been developed for TDD and FDD LTE systems. It is RoHS compliant and available in a surface-mount package that measures 10 x 6 mm. This amplifier is ideal for massive MIMO systems, outdoor small cells, low power remote radio heads, and low complexity analog or digital linearization systems.

Product Specifications

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Product Details

  • Part Number
    AFSC5G40E38
  • Manufacturer
    NXP Semiconductors
  • Description
    6.3 W LDMOS Power Amplifier from 3700 to 4000 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Wireless Infrastructure
  • Frequency
    3.7 to 4 GHz
  • Gain
    24.8 to 28.8 dB
  • Input Power
    25 dBm (peak)
  • Input Power
    0.31 W
  • PAE
    37.6 to 39.5 %
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Transistor Technology
    LDMOS
  • Package Type
    Chip
  • Dimensions
    10 x 6 mm
  • Storage Temperature
    -65 to 150 Degree C

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