RWP0809300-55

RF Amplifier by RFHIC | Visit website (151 more products)

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The RTP0809300-66 from RFHIC is a Power Amplifier that operates from 800 to 900 MHz. It delivers a CW output power of 300 W with 66 dB of gain. This amplifier has been designed for microwave heating, microwave drying, and microwave plasma generation. It is fabricated using RFHIC’s state-of-the-art gallium-nitride-on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP). The amplifier requires a DC supply of 45 V and consumes less than 20 A of current with a PAE of 35 to 44%. It is available in a flanged pallet module that measures 200 x 180 x 27 mm and has SMA and N-type female connectors.

Product Specifications

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Product Details

  • Part Number
    RWP0809300-55
  • Manufacturer
    RFHIC
  • Description
    300 W GaN Power Amplifier from 0.8 to 0.9 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Display Application
    Plasma Application, RF Sub-Systems
  • Frequency
    0.8 to 0.9 GHz
  • Gain
    55 dB
  • Gain Flatness
    +1.5 dB
  • Output Power
    300 W
  • Output Power
    54.77 dBm
  • Grade
    Commercial
  • Pulse Power
    57.4 to 58.12 dBm
  • Pulse Power
    550 to 650 W
  • Input Power
    -7 to -6 dBm
  • PAE
    35 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -18 dBm
  • Output Return Loss
    -15 dBm
  • Supply Voltage
    45 V
  • Current Consumption
    15 to 20 A
  • Quiscent Current
    0.28 to 0.3 A
  • Transistor Technology
    GaN HEMT
  • Dimensions
    180 x 220 x 27 mm
  • Input Connector
    SMA, SMA - Female
  • Output Connector
    N Type, N Type - Female
  • Interface
    Molex 6pin (Male)
  • Weight
    4 kg
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    10 to 100 Degree C
  • Storage Temperature
    -50 to 125 Degree C
  • RoHS
    Yes

Technical Documents