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HVV0405-1000

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The HVV0405-1000 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 420 to 470 MHz, Power 60.41 dBm, Power(W) 1100 W, Duty_Cycle 0.1, Gain 16.5 dB. Tags: Flanged. More details for HVV0405-1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV0405-1000
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    420 to 470 MHz, 1100 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    UHF, Radar
  • CW/Pulse
    Pulse
  • Frequency
    420 to 470 MHz
  • Power
    60.41 dBm
  • Power(W)
    1100 W
  • Pulsed Width
    1 ms
  • Duty_Cycle
    0.1
  • Gain
    16.5 dB
  • Power Gain (Gp)
    16.5 dB
  • Power Added Effeciency
    0.57
  • Input Return Loss
    15 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Input Power
    30 W
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.57
  • Drain Leakage Current (Id)
    500 uA
  • Gate Leakage Current (Ig)
    10 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Pulse Droop : 0.5 dB

Technical Documents
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