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AM010WH2-BI-R

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The AM010WH2-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 12 GHz, Power 30 dBm, Power(W) 1 W, P1dB 29 dBm, Power Gain (Gp) 16 to 18 dB. Tags: Flanged. More details for AM010WH2-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM010WH2-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    HiFET High Voltage GaAs FET DC-12 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure, Radar, Broadcast
  • Application
    Cellular, Radio, Repeater, C Band, VSAT, Radar, Communication System
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Power
    30 dBm
  • Power(W)
    1 W
  • P1dB
    29 dBm
  • Power Gain (Gp)
    16 to 18 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    22 to 30 V
  • Drain Efficiency
    0.43
  • Drain Current
    0.15 A
  • Thermal Resistance
    52 °C/W
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

Technical Documents
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