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MGF4965BM

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The MGF4965BM from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 20 GHz, Gain 9.5 to 11.5 dB, Noise Figure 0.95 to 1.25 dB, Supply Voltage 2 V, Operating Temperature -55 to 125 Degree C. Tags: Flanged. More details for MGF4965BM can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF4965BM
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 20 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    C Band, K Band
  • CW/Pulse
    CW
  • Frequency
    DC to 20 GHz
  • Gain
    9.5 to 11.5 dB
  • Noise Figure
    0.95 to 1.25 dB
  • Supply Voltage
    2 V
  • Breakdown Voltage
    -3 V (Gate Drain)
  • Drain Bias Current
    10 mA
  • Quiescent Drain Current
    10000 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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