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AM012MX-QG-R

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The AM012MX-QG-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 6 GHz, Power 25 dBm, Power(W) 0.32 W, P1dB 24 dBm, Power Gain (Gp) 12.5 to 13.5 dB. Tags: Surface Mount, PCB Mount. More details for AM012MX-QG-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM012MX-QG-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    Plastic Packaged GaAs Power FET

General Parameters

  • Transistor Type
    MESFET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application
    PCS, Base Station, WLAN, Repeater, VSAT
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power
    25 dBm
  • Power(W)
    0.32 W
  • P1dB
    24 dBm
  • Power Gain (Gp)
    12.5 to 13.5 dB
  • Supply Voltage
    5 to 7 V
  • Breakdown Voltage - Drain-Source
    11 to 15 V
  • Thermal Resistance
    67 °C/W
  • Package Type
    Surface Mount, PCB Mount
  • Package
    plastic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

Technical Documents
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