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RD09MUP2

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The RD09MUP2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 520 MHz, Power 39.03 to 39.54 dBm, Power(W) 8.99 W, Gain 10 dB, Supply Voltage 7.2 V. Tags: Flanged. More details for RD09MUP2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD09MUP2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 520 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio, UHF
  • CW/Pulse
    CW
  • Frequency
    DC to 520 MHz
  • Power
    39.03 to 39.54 dBm
  • Power(W)
    8.99 W
  • Gain
    10 dB
  • Supply Voltage
    7.2 V
  • Threshold Voltage
    0.5 to 2.5 V
  • Input Power
    0.8 W
  • Drain Efficiency
    0.5
  • Drain Bias Current
    0.01 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
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