The B10G1819N10DL from Ampleon is a 2-Stage Doherty LDMOS Transistor MMIC that operates from 1805 to 1880 MHz. It delivers an output power of 10 W with a gain of 31.8 dB with a drain efficiency of 46.7%. This transistor is based on Ampleon’s state-of-the-art LDMOS technology that integrates carrier and peaking device, input splitter, output combiner, and output matching in a single package. It also includes electrostatic discharge (ESD) protection for safety and offers excellent thermal stability. This RoHS-compliant transistor is available in a land grid array (LGA) package that measures 7 x 7 mm and is ideal for multi-carrier and multi-standard GSM, W-CDMA, LTE, and NR small cell base station applications.
