The B10H0710N40D from Ampleon is a Dual-Stage Doherty Transistor MMIC that operates from 700 MHz to 1 GHz. It provides 31 dB of gain with a drain efficiency of 54% and has an output P1dB of 50 W. This transistor is manufactured using Ampleon’s state-of-the-art 50 V LDMOS technology and has been designed for large RF and instantaneous bandwidth operations. It consists of a carrier and peaking device, an input splitter, an output combiner, and a pre-match circuit in each section of the transistor. This MMIC integrates a quad-combined configuration, which eliminates the need for an output circulator. It provides independent control of the carrier and peaking bias to cater to various applications. This transistor is also equipped with electrostatic discharge (ESD) protection for safety and reliability. It is available in a land grid array (LGA) package that measures 12 x 8 mm and is ideal for 4G/5G microcell/macrocell base station driver applications.
