BLC10G19XS-600AVT

RF Transistor by Ampleon (326 more products)

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The BLC10G19XS-600AVT from Ampleon is an LDMOS Doherty power transistor that operates from 1930 to 1995 MHz. It delivers peak power exceeding 600W with a Doherty gain of 15.5 dB and a drain efficiency above 48%. Integration of internal video decoupling minimizes memory effects, providing excellent digital pre-distortion capability. This transistor is suited for operation up to 30 V and is available in a 6-lead air cavity plastic package. The transistor is ideal for single-band multi-carrier macro base stations applications.

Product Specifications

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Product Details

  • Part Number
    BLC10G19XS-600AVT
  • Manufacturer
    Ampleon
  • Description
    1930 to 1995 MHz LDMOS Transistor for Base Station Applications

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Base Station, Wireless Infrastructure
  • Application Type
    Base Station
  • Application
    Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    1930 to 1695 MHz
  • Power
    57.78 dBm
  • Power(W)
    600 W
  • Power Gain (Gp)
    14 to 15 dB
  • Input Return Loss
    10 to 15 dB
  • Supply Voltage
    30 V
  • Voltage - Drain-Source (Vdss)
    30 V
  • Voltage - Gate-Source (Vgs)
    1.6 to 2.4 V
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Package Type
    4-Hole Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents