BLP05H9S500P

RF Transistor by Ampleon (326 more products)

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The BLP05H9S500P from Ampleon is an LDMOS Power Transistor that operates from 423 to 443 MHz. It provides an output power of up to 500 W with a power gain of over 24 dB and a drain efficiency of 75%. The transistor requires a 50 V power supply and is ideal for use in industrial heating, defrosting, plasma lighting and medical applications. It is available in a low thermal resistance OMP780 package with integrated ESD protection.

Product Specifications

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Product Details

  • Part Number
    BLP05H9S500P
  • Manufacturer
    Ampleon
  • Description
    500 W LDMOS Power Transistor from 423 to 443 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy, Wireless Infrastructure
  • Application
    Plasma Lighting, Medical, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    423 to 443 MHz
  • Power
    57 dBm
  • Power(W)
    500 W
  • Duty_Cycle
    68 to 72 %
  • Power Gain (Gp)
    24 to 25.2 dB
  • Input Return Loss
    9 to 14.5 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Voltage - Drain-Source (Vdss)
    108 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11 V
  • Current
    100 mA
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -65 to 150 Degree C

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