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C4H2327N55P

RF Transistor by Ampleon (326 more products)
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The C4H2327N55P from Ampleon is a RF Transistor with Frequency 2300 to 2700 MHz, Power 47 dBm, Power(W) 50 W, Power Gain (Gp) 16.7 dB, Voltage - Drain-Source (Vdss) 50 V. Tags: Surface Mount. More details for C4H2327N55P can be seen below.

Product Specifications

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Product Details

  • Part Number
    C4H2327N55P
  • Manufacturer
    Ampleon
  • Description
    50 W GaN Doherty Power Transistor from 2.3 to 2.69 GHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station
  • CW/Pulse
    CW
  • Frequency
    2300 to 2700 MHz
  • Power
    47 dBm
  • Power(W)
    50 W
  • Power Gain (Gp)
    16.7 dB
  • Voltage - Drain-Source (Vdss)
    50 V
  • Drain Efficiency
    0.55
  • Quiescent Drain Current
    30 mA
  • Package Type
    Surface Mount
  • Note
    Power Ratio:- -26.3 dBc, Average Output Power:- 39 dBm
View details on the manufacturer's website
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