C5H3438N110D

RF Transistor by Ampleon (326 more products)

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The C5H3438N110D from Ampleon is a GaN Doherty Power Transistor that operates from 3400 to 3800 MHz. It delivers an output power of 110 W with a power gain of 15 dB and a drain efficiency of 62%. This RF power transistor is based on a high-efficiency Doherty configuration and optimized for 5G massive MIMO applications. It is internally matched for ease of use and has excellent digital pre-distortion capability. This transistor is available in a compact QFN package that measures 8 x 8 mm and is ideal for multi carrier and base station applications.

Product Specifications

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Product Details

  • Part Number
    C5H3438N110D
  • Manufacturer
    Ampleon
  • Description
    110 W GaN Doherty Power Transistor from 3400 to 3800 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, 5G
  • CW/Pulse
    CW
  • Frequency
    3400 to 3800 MHz
  • Power
    56.02 dBm
  • Power(W)
    110 W (P5dB)
  • Power Gain (Gp)
    13.6 to 15 dB
  • Voltage - Drain-Source (Vdss)
    48 V
  • Drain Efficiency
    55 to 62 %
  • Package Type
    Surface Mount
  • Package
    QFN
  • Dimension
    8 mm x 8 mm