The BFR740L3RH from Infineon is a SiGe:C NPN Heterojunction Bipolar Transistor (HBT). It provides a gain of 20 dB at 5.5 GHz and has a noise figure of 0.5 dB at 1.9 GHz. The transistor requires a supply voltage of 4 V and consumes less than 30 mA of current. It is available in a low profile and small form factor leadless package.The BFR740L3RH is suitable for applications such as wireless communications (WLAN 2.4 GHz and 5-6 GHz bands, WiMax and UWB), satellite communication systems (Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB), multimedia (portable TV, CATV, FM Radio), ISM (RKE, AMR and Zigbee) as well as for emerging wireless applications.
