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RD06LUS2

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The RD06LUS2 from Mitsubishi Electric is a 520 MHz Silicon Power MOSFET. It delivers an output power of 6.5 W with a drain efficiency of 65%. This transistor integrates a gate protection diode for reliability. It requires a DC supply of 3.6 V. This RoHS-compliant transistor is available in a surface-mount package that measures 8.00 x 4.90 x 0.75 mm and is ideal for VHF/UHF RF power amplifier and mobile radio set applications.

Product Specifications

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Product Details

  • Part Number
    RD06LUS2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications

General Parameters

  • Transistor Type
    MOSFET
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Mobile Radio
  • CW/Pulse
    CW
  • Frequency
    520 MHz
  • Power
    38.13 dBm
  • Power(W)
    6.5 W
  • Input Power
    1.3 W
  • Voltage - Drain-Source (Vdss)
    14 V
  • Voltage - Gate-Source (Vgs)
    -5 to 5 V
  • Drain Efficiency
    60 to 65 %
  • Drain Bias Current
    50 uA (Cut-Off)
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    100 W
  • Thermal Resistance
    0.8 to 1.25 °C /W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C (Max)
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
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