CLF24H4LS300P

RF Transistor by Ampleon (324 more products)

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The CLF24H4LS300P from Ampleon is a GaN-on-SiC HEMT Power Transistor that operates from 2400 to 2500 MHz. It delivers an average output power of 300 W (CW) with a power gain of 14 dB and a drain efficiency of 74%. This transistor is optimized with the best continuous wave (CW) power and efficiency for cooking, industrial, scientific, and medical applications. It has an internally-matched input port for improved performance. This power transistor requires a drain-source voltage of 50 V and consumes less than 43.2 mA of gate current. It is available in a ceramic surface-mount package that measures 20.02 x 4.72 mm.

Product Specifications

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Product Details

  • Part Number
    CLF24H4LS300P
  • Manufacturer
    Ampleon
  • Description
    300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    ISM
  • Application
    Commercial, ISM
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.4 to 2.5 GHz
  • P1dB
    300 W (Linear)
  • Power Gain (Gp)
    14 dB
  • Input Return Loss
    10 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -15 to 2 V
  • Drain Efficiency
    74 to 75 %
  • Drain Leakage Current (Id)
    7.55 mA
  • Gate Leakage Current (Ig)
    1.51 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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