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CLF3H0060S-30

RF Transistor by Ampleon (326 more products)
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The CLF3H0060S-30 from Ampleon is a RF Transistor with Frequency DC to 6 GHz, Power 30 dBm (PL1dB), Power(W) 1 W (PL1dB), Power Gain (Gp) 15.5 to 17 dB, Input Return Loss 15 dB. Tags: Flanged. More details for CLF3H0060S-30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CLF3H0060S-30
  • Manufacturer
    Ampleon
  • Description
    30 W GaN-on-SiC HEMT from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Type
    CW and Pulsed Applications
  • Application
    General Purpose
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    30 dBm (PL1dB)
  • Power(W)
    1 W (PL1dB)
  • Power Gain (Gp)
    15.5 to 17 dB
  • Input Return Loss
    15 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Current
    60 mA
  • Gate Leakage Current (Ig)
    43.75 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • Package
    Thermally Enhanced
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Package Name: CLF3H0060-30 (SOT1227A), CLF3H0060S-30 (SOT1227B)

Technical Documents
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