BCP080T2

RF Transistor by BeRex, Inc. (27 more products)

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The BCP080T2 from BeRex, Inc. is a RF Transistor with Frequency 1 to 27.5 GHz, Power 30 dBm, Power(W) 1 W, P1dB 26 dBm, Gain 8.5 to 13 dB. Tags: Chip. More details for BCP080T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BCP080T2
  • Manufacturer
    BeRex, Inc.
  • Description
    HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)

General Parameters

  • Transistor Type
    pHEMT
  • Technology
    GaAs
  • Application Industry
    Test & Measurement, Aerospace & Defence, Commercial
  • Application
    Military
  • CW/Pulse
    CW
  • Frequency
    1 to 27.5 GHz
  • Power
    30 dBm
  • Power(W)
    1 W
  • P1dB
    26 dBm
  • Gain
    8.5 to 13 dB
  • Transconductance
    320 mS
  • Supply Voltage
    8 V
  • Breakdown Voltage
    -15 to -12 V (Drain Breakdown Voltage), -13 V (Source Breakdown Voltage)
  • Drain Bias Current
    160 to 320 mA (Saturated)
  • Thermal Resistance
    55 C/W
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -60 to 150 Degree C

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