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BCP120C

RF Transistor by BeRex, Inc. (27 more products)
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The BCP120C from BeRex, Inc. is a RF Transistor with Frequency DC to 26.5 GHz, Power 30.5 dBm, Power(W) 1.12 W, P1dB 28 dBm, Gain 6.5 to 11 dB. Tags: Chip. More details for BCP120C can be seen below.

Product Specifications

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Product Details

  • Part Number
    BCP120C
  • Manufacturer
    BeRex, Inc.
  • Description
    HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)

General Parameters

  • Transistor Type
    pHEMT
  • Technology
    GaAs
  • Application Industry
    Test & Measurement, Aerospace & Defence, Commercial
  • Application
    Military
  • CW/Pulse
    CW
  • Frequency
    DC to 26.5 GHz
  • Power
    30.5 dBm
  • Power(W)
    1.12 W
  • P1dB
    28 dBm
  • Gain
    6.5 to 11 dB
  • Transconductance
    470 mS
  • Supply Voltage
    8 V
  • Breakdown Voltage
    -15 to -12 V (Drain Breakdown Voltage), -13 V (Source Breakdown Voltage)
  • Drain Bias Current
    260 to 500 mA (Saturated)
  • Thermal Resistance
    37 C/W
  • Package Type
    Chip
  • Storage Temperature
    -60 to 150 Degree C

Technical Documents
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