The PXAE263708NB from MACOM is a Thermally-Enhanced RF LDMOS FET that operates from 2620 to 2690 MHz. The transistor provides an output power of 400 watts with a gain of 15 dB and has an efficiency of 49% while operating from a 28 V supply. This pulsed / CW device has a pulse width of 10 µs and a duty cycle of 10%. It features integrated ESD protection circuitry and provides excellent thermal performance and super reliability. This RoHS-compliant transistor is available in a thermally enhanced package with an earless flange and is intended for use in multi-standard cellular power amplifier applications.
