The GD400 from Gallium Semiconductor is a GaN-on-SiC HEMT that operates from DC to 2.9 GHz. It delivers a saturated output power of 400 W with a maximum drain efficiency of 64% and is suitable for CW, pulsed and linear applications. This transistor requires a DC supply of 28/50 V and consumes a quiescent drain current of 319 mA. It is available as a bare die that measures 5.5 x 1.2 mm and is shipped in Gel-Pak containers for safe transport and storage. The HEMT is ideal for cellular infrastructure, radar, communications & test instrumentation applications.
