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GRF0010

RF Transistor by Guerrilla RF
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The GRF0010 from Guerrilla RF is a RF Transistor with Frequency DC to 8 GHz, Power 39.5 to 41.4 dBm, Power(W) 8.9 to 13.8 W, Saturated Power 15 W, Gain 11 to 21.9 dB. Tags: Surface Mount. More details for GRF0010 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GRF0010
  • Manufacturer
    Guerrilla RF
  • Description
    15 W GaN-on-SiC HEMT from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    SATCOM, Wireless Infrastructure
  • Application
    5G, Medical, Plasma Generators, Repeater
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 8 GHz
  • Power
    39.5 to 41.4 dBm
  • Power(W)
    8.9 to 13.8 W
  • Saturated Power
    15 W
  • Gain
    11 to 21.9 dB
  • Small Signal Gain
    15 dB
  • Power Gain (Gp)
    17 dB
  • Efficiency
    53.6 to 67.6 %
  • Supply Voltage
    28 V & 50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Leakage Current (Id)
    50 uA
  • Quiescent Drain Current
    15 mA
  • Package Type
    Surface Mount
  • Package
    QFN-16
  • Dimension
    3 x 3 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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