The BFP620 from Infineon is a Silicon NPN RF Bipolar Transistor suitable for a wide range of wireless applications. This surface-mount transistor has an Ft of 65 GHz and provides an OP1dB of 14.5 dBm (OIP3 of 25.5 dBm @ 1.8 GHz) with a gain of 21.5 @ 1.8 GHz and has a noise figure of 1.3 dB.
The high-linearity transistor is based on Infineon’s SiGe:C technology qualified according to AEC Q101, and also qualified for industrial applications based on tests of JEDEC47/20/22. The BFP620 is available in a RoHS compliant package and is suitable for WLAN and CDMA applications, including low noise amplifiers (LNAs) in SDARS receivers, LNAs for wireless communications, and LNAs for ISM band applications.
