The BFP650 from Infineon is an NPN RF Transistor that operates from DC to 6 GHz. It delivers an OP1dB of 18 dBm with a power gain of 21.5 dB and has a noise figure of 0.8 dB. This RF bipolar transistor is based on SiGe:C technology that is part of Infineon’s established sixth-generation transistor family. It has a transition frequency fT of 42 GHz and high linearity characteristics at low currents make the device suitable for energy-efficient designs at frequencies as high as 5 GHz.
This RoHS-compliant amplifier is available in a SOT343 package and is qualified for industrial applications with a JEDEC47/20/22 certification. It is ideal for use in driver amplifiers, for 434 and 868 MHz ISM Band Applications, 1.9 GHz cordless phones, CATV LNAs, Transmitter driver amplifiers, 2.4 GHz WLAN / Bluetooth modules, 2.4 / 3.5 GHz WiMAX systems, output stage LNAs for active antennas, TV, GPS, SDARS, 5 - 10.5 GHz oscillators, and many more.
