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IB0607S1000

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The IB0607S1000 from Integra Technologies, Inc. is a RF Transistor with Frequency 653 to 687 MHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.02, Gain 9.3 dB. Tags: Flanged. More details for IB0607S1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB0607S1000
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    653 to 687 MHz, Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    UHF
  • CW/Pulse
    Pulse
  • Frequency
    653 to 687 MHz
  • Power
    60 dBm
  • Power(W)
    1000 W
  • Peak Output Power
    1000 W
  • Pulsed Width
    20 us
  • Duty_Cycle
    0.02
  • Gain
    9.3 dB
  • Power Gain (Gp)
    9 to 13 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    75 V (Collector Emmiter)
  • Drain Efficiency
    0.5
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Operating Temperature
    -60 to 200 Degree C
  • Storage Temperature
    -60 to 150 Degree C

Technical Documents
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