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IGN1030S3100

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The IGN1030S3100 from Integra Technologies, Inc. is a RF Transistor with Frequency 1 to 2 GHz, Power 64.91 dBm, Power(W) 3.1 kW, Supply Voltage 75 V. Tags: 2-Hole Flanged. More details for IGN1030S3100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1030S3100
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3.1 kW, GaN RF Transistor from 1 to 2 GHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Avionics
  • Application
    L Band
  • CW/Pulse
    CW
  • Frequency
    1 to 2 GHz
  • Power
    64.91 dBm
  • Power(W)
    3.1 kW
  • Supply Voltage
    75 V
  • Package Type
    2-Hole Flanged
  • Grade
    Space, Commercial
View details on the manufacturer's website
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