The IGN1030S3600 from Integra is a GaN-on-SiC RF Power Transistor that operates in the L-band at 1.03 GHz. It delivers an output power of over 3600 W, a gain of more than 18.0 dB, and has an efficiency of up to 75%. This RoHS compliant power transistor is based on GaN-on-SiC HEMT technology and is designed to suit the needs of IFF and SSR based avionics systems. It is available in a metal-based package that measures 0.654 x 1.620 inches with an epoxy-sealed ceramic lid to optimize thermal efficiency. This REACH complaint transistor is ideal for L-band avionics IFF and SSR systems, uplink and downlink transponder applications.
