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IGN1214L30

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The IGN1214L30 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 44.77 to 46.43 dBm, Power(W) 43.95 W, Duty_Cycle 0.3, Gain 16.4 dB. Tags: Flanged. More details for IGN1214L30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1214L30
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.2 to 1.4 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    44.77 to 46.43 dBm
  • Power(W)
    43.95 W
  • Pulsed Width
    5 ms
  • Duty_Cycle
    0.3
  • Gain
    16.4 dB
  • Power Gain (Gp)
    15.7 to 17.4 dB
  • Supply Voltage
    42 V
  • Threshold Voltage
    -2.5 V
  • Input Power
    0.8 W
  • Quiescent Drain Current
    30 to 40 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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