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IGN450M160

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The IGN450M160 from Integra Technologies, Inc. is a RF Transistor with Frequency 420 to 450 MHz, Power 52.04 dBm, Power(W) 159.96 W, Duty_Cycle 0.1, Gain 22 dB. Tags: Flanged. More details for IGN450M160 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN450M160
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    420 to 450 MHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    Radar, P Band
  • CW/Pulse
    Pulse
  • Frequency
    420 to 450 MHz
  • Power
    52.04 dBm
  • Power(W)
    159.96 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    22 dB
  • Power Gain (Gp)
    21 to 23 dB
  • Supply Voltage
    50 V
  • Input Power
    0.8 to 1.25 W
  • Quiescent Drain Current
    45 to 55 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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