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ILD2735M120

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The ILD2735M120 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3.5 GHz, Power 40.79 dBm, Power(W) 11.99 W, Duty_Cycle 0.1, Gain 10 dB. Tags: Flanged. More details for ILD2735M120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD2735M120
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2700 to 3500 MHz, 10 dB LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.5 GHz
  • Power
    40.79 dBm
  • Power(W)
    11.99 W
  • Peak Output Power
    120 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    10 dB
  • Supply Voltage
    32 V
  • Input Power
    11 to 17 W
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    2.5 to 4 V
  • Quiescent Drain Current
    60 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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