CGH27030S

RF Transistor by MACOM (309 more products)

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CGH27030S Image

The CGH27030S is an unmatched GaN HEMT transistor that operates from DC to 6 GHz. It can provide a power of up to 30 W and requires a 28 V supply for operation. The transistor has been designed for high efficiency, high gain and wide bandwidth capabilities making it ideal for LTE, 4G Telecom and BWA amplifier applications. It is available in a 3 x 4 mm surface mount DFN package.

Product Specifications

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Product Details

  • Part Number
    CGH27030S
  • Manufacturer
    MACOM
  • Description
    30-W, DC to 6.0 GHz, GaN HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    4G / LTE, 4G / LTE
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • Peak Output Power
    30 W
  • Small Signal Gain
    18.3 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    84 V
  • Drain Efficiency
    0.337
  • Drain Current
    0.20 A
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    3 mm x 4 mm
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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