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EGN35C070I2D

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EGN35C070I2D Image

The EGN35C070I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3.5 GHz, Power 45.8 dBm, Power(W) 38.02 W, Saturated Power 48 to 48.8 dBm, Power Gain (Gp) 14.5 to 15.5 dB. Tags: Flanged. More details for EGN35C070I2D can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGN35C070I2D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band
  • Application
    Base Station, 4G / LTE
  • Frequency
    3.5 GHz
  • Power
    45.8 dBm
  • Power(W)
    38.02 W
  • Saturated Power
    48 to 48.8 dBm
  • Power Gain (Gp)
    14.5 to 15.5 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    75 W
  • Thermal Resistance
    2.5 to 3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 76 mA, Reverse Gate Current : -2.6 mA

Technical Documents
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