CGH35060F1/P1

RF Transistor by MACOM (310 more products)

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The CGH35060F1/P1 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3300 to 3900 MHz and can provide an output power of up to 60 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
    CGH35060F1/P1
  • Manufacturer
    MACOM
  • Description
    60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMax
  • CW/Pulse
    CW
  • Frequency
    3.3 to 3.6 GHz
  • Power
    39.03 dBm
  • Power(W)
    8 W
  • Peak Output Power
    60 W
  • Small Signal Gain
    10 to 11.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    250 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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