The CGH40006P from MACOM is a High Electron Mobility Transistor (HEMT) that operates from DC to 6 GHz. It delivers an output power of 6 W with a small signal gain of 13 dB and has an efficiency of 65%. This GaN HEMT offers high efficiency, high gain, and wide bandwidth capabilities for linear and compressed amplifier circuits. It is available in a solder-down, pill package and requires a DC supply of 28 V. The transistor is suitable for use in 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and Class A, AB, amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms.
