The CGHV14800F1 from MACOM is a GaN Transistor that operates from 1.2 to 1.4 GHz. It delivers a saturated output power of 800 W (59 dBm) with a drain efficiency of 65%. This transistor has a large signal gain of 14 dB and a small signal gain of 18 dB. It can handle 45 dBm of input power and has a return loss of 12 dB (input) & 5 dB (output). This transistor requires a drain voltage of 50 V, a gate voltage of -2.95 V, and consumes 800 mA of drain current. The transistor is based on MACOM’s high-performance 0.4 µm GaN-on-SiC production process and is available in a thermally-enhanced flange package that measures 34.036 x 19.431 x 3.632 mm. This transistor is ideal for defense and commercial-related avionics (TACAN, DME, IFF), L-band radar, and general-purpose amplification applications.
