CGHV1F006S

RF Transistor by MACOM (309 more products)

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The CGHV1F006S from MACOM is an unmatched, GaN HEMT that operates from DC to 15 GHz. This HEMT can be used for L, S, C, X and Ku-band amplifier applications. It provides 8 watts of output power with 15 dB of gain at 9 GHz. The transistor operates on a 40-volt rail circuit and is available in a 3 x 4 mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power conditions, the transistor can operate below 40 V to as low as 20-V VDD, maintaining high gain and efficiency.

Product Specifications

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Product Details

  • Part Number
    CGHV1F006S
  • Manufacturer
    MACOM
  • Description
    8 W GaN HEMT from DC to 15 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Aerospace & Defence
  • Application
    L Band, S Band, C Band, X Band, Ku Band, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 15 GHz
  • Power
    39 dBm
  • Power(W)
    8 W
  • Saturated Power
    8 W
  • Gain
    15 to 17 dB
  • Small Signal Gain
    15.15 to 16.8 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    40 V
  • Threshold Voltage
    -3.6 to -2.4 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Current
    60 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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