The CGHV1J025D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 18000 MHz and a gain of 17 dB with a supply voltage of 40 V . This Gan Transistor can provide an output power of up to 25 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
