CGHV1J070D

RF Transistor by MACOM (309 more products)

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CGHV1J070D Image

The CGHV1J070D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 18000 MHz and a gain of 17 dB with a supply voltage of 40 V . This Gan Transistor can provide an output power of up to 70 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
    CGHV1J070D
  • Manufacturer
    MACOM
  • Description
    70-W, 18.0-GHz, GaN HEMT Die

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, SATCOM
  • Application
    Radar
  • CW/Pulse
    CW
  • Frequency
    10 MHz to 18 GHz
  • Power
    48.4 dBm
  • Power(W)
    69.18 W
  • Saturated Power
    48.4 dBm
  • Small Signal Gain
    17 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    40 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Efficiency
    0.6
  • Drain Current
    720 mA
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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