GTRA362802FC-V1

RF Transistor by MACOM (309 more products)

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GTRA362802FC-V1 Image

The GTRA362802FC-V1 from MACOM is a GaN on SiC HEMT that operates from 3.3 to 3.6 GHz. It provides a peak output power of 280 W (P3dB) and a gain of 13.5 dB while operating from 48 V supply. This Pulsed device has a pulse width of 10 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange and is ideal for multi-standard cellular power amplifier applications. The GTRA362802FC is capable of withstanding a 10:1 load mismatch at 48 V, 44 W (CW) output power.

Product Specifications

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Product Details

  • Part Number
    GTRA362802FC-V1
  • Manufacturer
    MACOM
  • Description
    280 W GaN on SiC HEMT from 3.3 to 3.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    3G / WCDMA, 5G
  • CW/Pulse
    CW, Pulse
  • Frequency
    3400 to 3600 MHz
  • Power
    54.47 dBm
  • Power(W)
    280 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    10 %
  • Gain
    15 dB
  • Supply Voltage
    55 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.6
  • Package Type
    Earless Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degrees C

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