The GTRA412852FC-V1 from MACOM is a GaN-on-SiC High Electron Mobility Transistor (HEMT) that operates from 3.4 to 4.1 GHz. It delivers an output power of 235 watts (P3dB) with a gain of 11.5 dB and an efficiency of 45%. This pulsed device requires a supply voltage of 48 V and has a pulse width of 10 µs. It RoHS-complaint, and Pb-free. The transistor is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard cellular power amplifiers.
